2sc5154 2004-07-07 1 toshiba transistor silicon npn epitaxial type (pct process) 2sc5154 power amplifier applications driver stage amplifier applications ? high transition frequency: f t = 100 mhz (typ.) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 5 v dc i c 1.5 collector current pulse i cp 3.0 a base current i b 0.15 a collector power dissipation p c 1.3 w junction temperature t j 150 c storage temperature range t stg ? 50 to 150 c electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = 160 v, i e = 0 D D 1.0 a emitter cut-off current i ebo v eb = 5 v, i c = 0 D D 1.0 a collector-emitter breakdown voltage v (br) ceo i c = 10 ma, i b = 0 160 D D v dc current gain h fe (note) v ce = 5 v, i c = 100 ma 70 D 240 collector-emitter saturation voltage v ce (sat) i c = 500 ma, i b = 50 ma D D 1.0 v base-emitter voltage v be v ce = 5 v, i c = 500 ma D 0.75 0.95 v transition frequency f t v ce = 10 v, i c = 100 ma D 100 D mhz collector output capacitance c ob v cb = 10 v, i c = 0, f = 1 mhz D 25 D pf note: h fe classification o: 70 to 140, y: 120 to 240 marking unit: mm jedec D jeita D toshiba 2-8m1a weight: 0.55 g (typ.) c5154 lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. characteristics indicator part no. (or abbreviation code)
2sc5154 2004-07-07 2 collector power dissipation p c (w) transition frequency f t (mhz) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (ma) f t ? i c ambient temperature ta (c) p c ? ta 0 0 0.2 0.6 0.8 1.2 1.4 1.6 25 50 75 100 125 150 175 1.0 0.4 0 0 common emitter ta = 2 5 c 1.2 0.2 0.4 0.6 0.8 1.0 2 4 6 8 10 14 12 12 6 4 20 8 i b = 2 ma 0 25 common emitter i c /i b = 10 0.003 1 0.02 0.05 0.1 0.3 0.5 0.01 0.03 0.1 0.3 1 ta = 100c ? 25 0.003 500 common emitter v ce = 5 v 10 30 50 100 300 0.01 0.03 0.1 0.3 1 ta = 100c 25 ? 25 common emitter v ce = 10 v ta = 25c 300 ? 5 10 30 50 100 ? 10 ? 30 ? 100 ? 300 ? 1000
2sc5154 2004-07-07 3 r th ? t w pulse width t w (s) transient thermal resistance r th (c/w) collector-emitter voltage v ce (v) safe operating area collector current i c (a) *: single nonrepetitive pulse ta = 25c curves must be derated linearly with increase in temperature. i c max (continuous) i c max (pulsed)* 0.001 0.3 1 3 10 30 100 0.01 0.003 1 ms* 10 ms* 100 ms* v ceo max 0.1 0.03 1 10 0.3 dc operation ta = 25c 300 3 curves should be applied in thermal limited area. (single nonrepetitive pulse) ta = 25c 1000 0.1 0.001 0.01 1 10 100 1000 0.1 3 10 30 100 300 0.3 1 0.003 0.03 0.3 3 30 300
2sc5154 2004-07-07 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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